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(R)
STPS60L40CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
n
A1 K A2
2 x 30 A 40 V 150C 0.50 V
n
n
LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION AVALANCHE CAPABILITY SPECIFIED TO-247
A2 K A1
DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 135C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 40 50 30 60 600 2 4 12300 - 65 to + 150 150 10000 A A A W C C V/s Unit V A A
tp = 10 ms Sinusoidal tp = 2 s square F=1kHz tp = 100 s square tp = 1s Tj = 25C
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
1/4
July 2003 - Ed: 5A
STPS60L40CW
THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Parameter Junction to case Per diode Total Coupling Value 0.75 0.42 0.1 Unit C/W C/W
When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 380 s, < 2%
Min.
Typ. 30
VR = VRRM IF = 30 A IF = 30 A IF = 60 A IF = 60 A 0.64 0.44
Max. 1.5 110 0.55 0.5 0.73 0.72
Unit mA mA V
To evaluate the maximum conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0073 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W)
= 0.05 = 0.1 = 0.2 = 0.5 =1
Fig. 2: Average current versus temperature ( = 0.5) (per diode).
IF(av)(A)
Rth(j-a)=Rth(j-c)
ambient
22 20 18 16 14 12 10 8 6 4 2 0
35 30 25 20 15
T
Rth(j-a)=15C/W
10 5
tp
T
IF(av) (A) 0 5 10 15 20 25 30
=tp/T
=tp/T
tp
0
Tamb(C) 50 75 100 125 150
35
40
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
2/4
STPS60L40CW
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).
IM(A)
400 350 300 250 200 150 100 50 0 1E-3
IM t
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c) 1.0 0.8
Tc=25C
0.6 0.4 0.2
= 0.5
Tc=75C
= 0.2 = 0.1
T
=0.5
t(s)
1E-2 1E-1
Tc=125C
Single pulse
tp(s) 1E-3 1E-2
1E+0
0.0 1E-4
=tp/T
tp
1E-1
1E+0
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode).
IR(mA)
1E+3
Tj=150C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(nF) 10.0
F=1MHz Tj=25C
1E+2
Tj=125C
1E+1 1E+0 1E-1 1E-2 0 5 10
Tj=100C
1.0
Tj=25C
VR(V)
15 20 25 30 35 40
VR(V) 0.1 1 2 5 10 20 50
Fig. 9: Forward voltage drop versus forward current (per diode).
IFM(A)
200 100
Typical values Tj=150C
Maximum values Tj=125C
10
Maximum values Tj=100C
Maximum values Tj=25C
VFM(V)
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
3/4
STPS60L40CW
PACKAGE MECHANICAL DATA TO-247 DIMENSIONS
V
REF.
Millimeters Max. 5.15 2.60 0.80 1.40
Inches Min. Typ. Max. 0.191 0.203 0.086 0.102 0.015 0.031 0.039 0.055 0.118 0.078 0.078 0.094 0.118 0.133 0.429 0.608 0.620 0.781 0.793 0.145 0.169 0.728 0.559 0.582 1.362 0.216 0.078 0.118 5 60 0.139 0.143
V
Dia.
H
A
L5
L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3
F1
L1 D
Min. Typ. A 4.85 D 2.20 E 0.40 F 1.00 F1 3.00 F2 2.00 F3 2.00 F4 3.00 G 10.90 H 15.45 L 19.85 L1 3.70 L2 18.50 L3 14.20 L4 34.60 L5 5.50 M 2.00 V 5 V2 60 Dia. 3.55
2.40 3.40 15.75 20.15 4.30 14.80
3.00
3.65
n n n
COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.8M.N MAXIMUM TORQUE VALUE : 1.0M.N Delivery mode Tube
Ordering type STPS60L40CW
n
Marking STPS60L40CW
Package TO-247
Weight 4.4g
Base qty 30
EPOXY MEETS UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4

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